Schottky-Gated Probe-Free ZnO Nanowire Biosensor.

Synthesis, characterization and electrical properties of hybrid Zn2GeO4–ZnO beaded nanowire arrays

We report the syntheses of vertically aligned, beaded zinc germinate (Zn2GeO4)/zinc oxide (ZnO) hybrid nanowire arrays via a catalyst-free approach. Vertically aligned ZnO nanowire is used as a lattice matching reactive template for the growth of Zn2GeO4/ZnO nanowire. The morphology and structure of the as-prepared samples were characterized using X-ray diffractometry (XRD), scanning electron (...

Tuning of electronic transport characteristics of ZnO micro/nanowire piezotronic Schottky diodes by bending: threshold voltage shift.

We report the longitudinal and transverse PtIr-ZnO wire piezotronic Schottky diodes in a conductive atomic force microscope (C-AFM). The tuning of electronic transport characteristics by bending ZnO wire was investigated. For longitudinal transport, the threshold voltage can be tuned over a wide range (from 1 V to 8 V) during the bending process. For transverse transport, the threshold voltage ...

Gate Modulation of Graphene-ZnO Nanowire Schottky Diode

Graphene-semiconductor interface is important for the applications in electronic and optoelectronic devices. Here we report the modulation of the electric transport properties of graphene/ZnO nanowire Schottky diode by gate voltage (Vg). The ideality factor of the graphene/ZnO nanowire Schottky diode is ~1.7, and the Schottky barrier height is ~0.28 eV without external Vg. The Schottky barrier ...

Quantifying the barrier lowering of ZnO Schottky nanodevices under UV light

In this study we measured the degrees to which the Schottky barrier heights (SBHs) are lowered in ZnO nanowire (NW) devices under illumination with UV light. We measured the I-V characteristics of ZnO nanowire devices to confirm that ZnO is an n-type semiconductor and that the on/off ratio is approximately 10(4). From temperature-dependent I-V measurements we obtained a SBH of 0.661 eV for a Zn...

Enhanced random lasing from distributed Bragg reflector assisted Au-ZnO nanowire Schottky diode